Charge-collection characteristics of GaAs heterostructure FETs fabricated with a low-temperature grown GaAs buffer layer

Author

McMorrow, Dale ; Weatherford, Todd R. ; Knudson, Alvin R. ; Buchner, Steffen ; Melinger, Joseph S. ; Lan Hu Tran ; Campbell, A. B B ; Marshal, Paul W. ; Dale, Cheryl J. ; Peczalski, Andrej ; Baiers, S.

Author_Institution

Naval Res. Lab., Washington, DC, USA

fYear

1995

fDate

18-22 Sep 1995

Firstpage

373

Lastpage

378

Abstract

The charge-collection characteristics of GaAs heterojunction-insulated-gate FETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer are investigated as a function of device bias conditions for laser and ion irradiation. In accordance with earlier measurements, the LT GaAs FETs of this study exhibit a significant reduction in charge-collection efficiencies when compared to those of conventional FETs. This reduction in collected charge is associated with the efficient reduction of charge-enhancement mechanisms in the LT GaAs devices. It is revealed that charge-enhancement processes do occur in the LT devices under certain bias conditions, although at significantly reduced levels when compared to conventional FETs

Keywords

III-V semiconductors; gallium arsenide; insulated gate field effect transistors; ion beam effects; laser beam effects; GaAs; GaAs heterojunction-insulated-gate FET; charge collection efficiency; charge enhancement; device bias; ion irradiation; laser irradiation; low-temperature grown GaAs buffer layer; Buffer layers; Circuits; Computer errors; Current measurement; Extraterrestrial measurements; FETs; Gallium arsenide; HEMTs; MESFETs; MODFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509805

Filename

509805