Title :
Evidence of the sensitivity inhomogeneity of power MOSFETs´ cells to single event burnout
Author :
Dachs, Charles ; Roubaud, Franck ; Palau, Jean-Marie ; Bruguier, Guy ; Gasiot, Jean ; Calvet, Marie-Catherine ; Calvel, Philippe ; Tastet, Pierre
Author_Institution :
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
Results obtained under heavy ion irradiation of one cell or different areas of a power MOSFET are presented. The observed responses confirm that the burnout current evolution depends on the impact localisation with respect to the cell and show that the sensitivity to burnout is variable over the transistor surface
Keywords :
ion beam effects; power MOSFET; heavy ion irradiation; impact localisation; power MOSFET cell; sensitivity inhomogeneity; single event burnout current; transistor; Aluminum; Circuit testing; MOSFETs; Medical simulation; Mesons; Microscopy; Predictive models; Protection; Taste buds;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509807
