DocumentCode
2201000
Title
Evidence of the sensitivity inhomogeneity of power MOSFETs´ cells to single event burnout
Author
Dachs, Charles ; Roubaud, Franck ; Palau, Jean-Marie ; Bruguier, Guy ; Gasiot, Jean ; Calvet, Marie-Catherine ; Calvel, Philippe ; Tastet, Pierre
Author_Institution
Centre d´´Electron. de Montpellier, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fYear
1995
fDate
18-22 Sep 1995
Firstpage
387
Lastpage
390
Abstract
Results obtained under heavy ion irradiation of one cell or different areas of a power MOSFET are presented. The observed responses confirm that the burnout current evolution depends on the impact localisation with respect to the cell and show that the sensitivity to burnout is variable over the transistor surface
Keywords
ion beam effects; power MOSFET; heavy ion irradiation; impact localisation; power MOSFET cell; sensitivity inhomogeneity; single event burnout current; transistor; Aluminum; Circuit testing; MOSFETs; Medical simulation; Mesons; Microscopy; Predictive models; Protection; Taste buds;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location
Arcachon
Print_ISBN
0-7803-3093-5
Type
conf
DOI
10.1109/RADECS.1995.509807
Filename
509807
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