DocumentCode :
2201026
Title :
Single event damage effects in cryogenic CMOS microelectronics
Author :
Pickel, James C.
Author_Institution :
S-Cubed Div., Maxwell Labs., Mission Viejo, CA, USA
fYear :
1995
fDate :
18-22 Sep 1995
Firstpage :
391
Lastpage :
396
Abstract :
Cryogenic microelectronics, as used in focal plane arrays in space-based optical sensors, are potentially vulnerable to single event damage effects from energetic heavy ions and protons. Results are presented for numerical simulation and analytical assessment of potential effects in generic FPAs. Present-generation FPAs are not likely to be affected by single event damage, but the potential will increase as minimum transistor size is made smaller
Keywords :
CMOS integrated circuits; cryogenic electronics; focal planes; ion beam effects; proton effects; FPA; cryogenic CMOS microelectronics; focal plane array; heavy ions; numerical simulation; protons; single event damage; space-based optical sensor; CMOS integrated circuits; Cryogenics; Electron traps; MOSFET circuits; Microelectronics; Optical arrays; Optical sensors; Protons; Sensor arrays; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
Type :
conf
DOI :
10.1109/RADECS.1995.509808
Filename :
509808
Link To Document :
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