Title :
Shape of the response curve in SEU testing
Author :
McNulty, P.J. ; Reed, R.A. ; Beauvais, W.J. ; Roth, D.R.
Author_Institution :
Dept. of Phys. & Astron., Clemson Univ., SC, USA
Abstract :
An algorithm for predicting the shape of the curve describing the rise in SEU cross section with the LET of the incident particle from charge-collection measurements at a single LET, is described. Two tests of the algorithm are given, one on a bipolar SRAM and the other on a CMOS SRAM. Experimental data agrees with the algorithm for both cases. This agreement suggest that the slow rise in the SEU cross section with the LET of the incident particle is due to fluctuations in the charge collected with particles incident at the same LET
Keywords :
CMOS memory circuits; SRAM chips; bipolar memory circuits; integrated circuit testing; ion beam effects; CMOS SRAM; LET; SEU testing; algorithm; bipolar SRAM; charge collection measurement; cross section; particle irradiation; response curve; Astronomy; Circuits; Current measurement; Fluctuations; Physics; Prediction algorithms; Pulse measurements; Random access memory; Shape measurement; Testing;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509809
