Title :
Model of single event upsets induced by space protons in electronic devices
Author :
Doucin, B. ; Carrière, T. ; Poivey, C. ; Garnier, P. ; Beaucour, J. ; Patin, Y.
Author_Institution :
Matra Marconi Space, Velizy Villacoublay, France
Abstract :
An evaluation of energy deposition induced by p-Si nuclear reactions as a function of circuit sensitive thickness and proton incident energy is performed to develop a model which predicts proton-induced SEU cross-sections from heavy ion experiment. A set of experimental validation is presented showing the convenient accuracy of the model
Keywords :
elemental semiconductors; proton effects; semiconductor device models; silicon; SEU cross-sections; Si; electronic device; energy deposition; model; p-Si nuclear reaction; single event upsets; space protons; Capacity planning; Circuits; Manufacturing; Performance evaluation; Predictive models; Protons; Radiation detectors; Random access memory; Single event transient; Single event upset;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509810
