DocumentCode :
2201174
Title :
Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides
Author :
Martini, M. ; Meinardi, F. ; Rosetta, E. ; Spinolo, G. ; Vedda, A. ; Leray, J.L. ; Paillet, P. ; Autran, J.L. ; Devine, R.A.B.
Author_Institution :
Dipartimento di Fisica, Milan Univ., Italy
fYear :
1995
fDate :
18-22 Sep 1995
Firstpage :
437
Lastpage :
442
Abstract :
Thermally Stimulated Luminescence (TSL) and Conductivity (TSC) induced by X-ray irradiation in SIMOX buried oxides have been studied from room temperature up to 400°C. The characteristics of an X-ray induced TSL glow peak detected around 62°C are presented: specifically, results on the emission wavelength and trap depth are shown. The X-ray induced TSC, observed at approximately 70°C, is due to the same trapped species responsible of the TSL emission. The stability after irradiation and dose dependence of both TSL and TSC signals have also been investigated. The results have been compared with similar studies on high temperature annealed thermal SiO2 films and bulk materials
Keywords :
SIMOX; X-ray effects; buried layers; thermally stimulated currents; thermoluminescence; 20 to 400 C; SIMOX buried oxide; Si-SiO2; X-ray irradiation; emission wavelength; glow peak; thermally stimulated conductivity; thermally stimulated luminescence; trap depth; Annealing; Luminescence; Microelectronics; Performance evaluation; Silicon; Spectroscopy; Temperature measurement; Temperature sensors; Thermal conductivity; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
Type :
conf
DOI :
10.1109/RADECS.1995.509816
Filename :
509816
Link To Document :
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