Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides

Author

Martini, M. ; Meinardi, F. ; Rosetta, E. ; Spinolo, G. ; Vedda, A. ; Leray, J.L. ; Paillet, P. ; Autran, J.L. ; Devine, R.A.B.

Author_Institution

Dipartimento di Fisica, Milan Univ., Italy

fYear

1995

fDate

18-22 Sep 1995

Firstpage

437

Lastpage

442

Abstract

Thermally Stimulated Luminescence (TSL) and Conductivity (TSC) induced by X-ray irradiation in SIMOX buried oxides have been studied from room temperature up to 400°C. The characteristics of an X-ray induced TSL glow peak detected around 62°C are presented: specifically, results on the emission wavelength and trap depth are shown. The X-ray induced TSC, observed at approximately 70°C, is due to the same trapped species responsible of the TSL emission. The stability after irradiation and dose dependence of both TSL and TSC signals have also been investigated. The results have been compared with similar studies on high temperature annealed thermal SiO₂ films and bulk materials

Keywords

SIMOX; X-ray effects; buried layers; thermally stimulated currents; thermoluminescence; 20 to 400 C; SIMOX buried oxide; Si-SiO₂; X-ray irradiation; emission wavelength; glow peak; thermally stimulated conductivity; thermally stimulated luminescence; trap depth; Annealing; Luminescence; Microelectronics; Performance evaluation; Silicon; Spectroscopy; Temperature measurement; Temperature sensors; Thermal conductivity; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509816

Filename

509816