A localized collector implant to improve uniformity of polysilicon bipolar transistors

Author

van Wijnen, P.J. ; de Jong, J.L. ; Lane, R. ; van Schravendijk, B.

Author_Institution

Philips Res. Lab., Sunnyvale, CA, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

160

Lastpage

163

Abstract

It is shown that a localized collectivity implant can be used to improve the device performance as well as to increase the uniformity of device characteristics over the wafer of single polysilicon bipolar transistors. These advantages, which do not require additional masking steps, are important for both bipolar and BiCMOS technologies. Application of the localized collector implant in BiCMOS processes has the additional benefit that the NPN and MOS transistors can be optimized fairly independently. Some of the negative effects of the localized collectivity implant approach are examined

Keywords

BIMOS integrated circuits; bipolar integrated circuits; bipolar transistors; elemental semiconductors; ion implantation; semiconductor doping; silicon; BiCMOS technologies; bipolar IC technology; localized collectivity implant; localized collector implant; single polysilicon bipolar transistors; uniformity of device characteristics; wafer uniformity; BiCMOS integrated circuits; Bipolar transistors; Counting circuits; Current density; Cutoff frequency; Implants; Ion implantation; Laboratories; Lithography; Tail;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69482

Filename

69482