Title :
A study involving the design and the fabrication process on the SRAM behaviour during a dose-rate event
Author :
Marec, Ronan ; Mary, Patrick ; Gaillard, Rémi ; Palau, Jean-Marie ; Bruguier, Guy ; Gasiot, Jean
Author_Institution :
NUCLETUDES S.A., Les Ulis, France
Abstract :
The experimental results analysis of TS4T1601 SRAMs in standby mode and electrical simulations show that the SRAM design and some slight mask misalignments during the fabrication process are dominant factors concerning the dose-rate upset patterns and thresholds
Keywords :
SRAM chips; X-ray effects; TS4T1601 SRAM; design; dose-rate event; electrical simulation; fabrication; mask misalignment; standby mode; threshold; upset pattern; Analytical models; Circuits; Fabrication; Pattern analysis; Random access memory; Testing;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509819
