Title :
Avalanche semiconductor radiation detectors
Author :
Sadygov, Z.Y. ; Zheleznykh, I.M. ; Malakhov, N.A. ; Jejer, V.N. ; Kirillova, T.A.
Author_Institution :
JINR, Dubna, Russia
Abstract :
Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si-SiC and Si-SixOy is described. A uniform avalanche process with gain from 103 to 105 can be reached depending on the conductivity of SiC and SixOy layers. Two types of avalanche photodetectors designed for applications in wavelength range 500-1000 nm with quantum efficiency 60±10% (650 nm) and 200-700 mm with quantum efficiency 60±15% (450 nm) are presented
Keywords :
avalanche photodiodes; photodetectors; silicon radiation detectors; 200 to 700 nm; 500 to 1000 nm; 60 percent; Si-SixOy heterojunction; Si-SiC; Si-SiC heterojunction; Si-SiO; avalanche photodetector; avalanche semiconductor radiation detector; conductivity; gain; quantum efficiency; Avalanche breakdown; Breakdown voltage; Conductivity; Electrodes; Fluctuations; Physics; Radiation detectors; Sensor arrays; Silicon carbide; Substrates;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509820
