Title :
Assessment of a new p-MOSFET usable as a doserate insensitive gamma dose sensor
Author :
Vettese, F. ; Donichak, C. ; Bourgeault, P. ; Sarrabayrouse, G.
Author_Institution :
DGA/DRET, Centre d´´Etudes du Bouchet, France
Abstract :
The DGA/CEB has made an assessment of the dosimetric response of a single unbiased MOSFET gamma-radiation sensor, designed and created by LAAS-CNRS. This transistor is to be the sensor of a military personnel dosimeter to record gamma doses emitted at a doserate higher than 20 Gy/h
Keywords :
MOSFET; dosimeters; gamma-ray detection; semiconductor counters; doserate insensitive gamma radiation sensor; military personnel dosimeter; p-MOSFET; transistor; Current measurement; Dissolved gas analysis; Gamma ray detectors; Gamma rays; MOSFET circuits; Neutrons; Personnel; Pollution measurement; Temperature; Threshold voltage;
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
DOI :
10.1109/RADECS.1995.509822
