• DocumentCode
    2201631
  • Title

    Radiation effects in resonance-tunnel diode structures

  • Author

    Gromov, D.V. ; Elesin, V.V. ; Maltcev, P.P. ; Nikiforov, A.Y. ; Polunin, V.A.

  • Author_Institution
    Specialized Electron. Syst., Moscow, Russia
  • fYear
    1995
  • fDate
    18-22 Sep 1995
  • Firstpage
    557
  • Lastpage
    559
  • Abstract
    Transient and structural damage effects in resonance-tunnel diode (RTD) structures are investigated under 60Co and pulsed laser influences. It was found that RTD semiconductor structural damage and dose-rate effects change the electron transport conditions and result in RTD current-voltage characteristic degradation
  • Keywords
    gamma-ray effects; laser beam effects; resonant tunnelling diodes; semiconductor device reliability; current-voltage characteristic degradation; dose-rate effects; electron transport conditions; gamma ray effects; pulsed laser influences; resonance-tunnel diode structures; structural damage effects; transient effects; Current-voltage characteristics; Electrons; Gallium arsenide; Optical pulses; Pulsed power supplies; Radiation effects; Resonance; Semiconductor diodes; Semiconductor lasers; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
  • Conference_Location
    Arcachon
  • Print_ISBN
    0-7803-3093-5
  • Type

    conf

  • DOI
    10.1109/RADECS.1995.509836
  • Filename
    509836
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2201631