DocumentCode :
2201631
Title :
Radiation effects in resonance-tunnel diode structures
Author :
Gromov, D.V. ; Elesin, V.V. ; Maltcev, P.P. ; Nikiforov, A.Y. ; Polunin, V.A.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
fYear :
1995
fDate :
18-22 Sep 1995
Firstpage :
557
Lastpage :
559
Abstract :
Transient and structural damage effects in resonance-tunnel diode (RTD) structures are investigated under 60Co and pulsed laser influences. It was found that RTD semiconductor structural damage and dose-rate effects change the electron transport conditions and result in RTD current-voltage characteristic degradation
Keywords :
gamma-ray effects; laser beam effects; resonant tunnelling diodes; semiconductor device reliability; current-voltage characteristic degradation; dose-rate effects; electron transport conditions; gamma ray effects; pulsed laser influences; resonance-tunnel diode structures; structural damage effects; transient effects; Current-voltage characteristics; Electrons; Gallium arsenide; Optical pulses; Pulsed power supplies; Radiation effects; Resonance; Semiconductor diodes; Semiconductor lasers; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on
Conference_Location :
Arcachon
Print_ISBN :
0-7803-3093-5
Type :
conf
DOI :
10.1109/RADECS.1995.509836
Filename :
509836
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2201631
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