Gamma and neutron irradiation of optoelectronic devices

Author

Liscka, H. ; Henschel, H. ; Köhn, O. ; Lennartz, W. ; Metzger, S. ; Schmidt, H.U.

Author_Institution

Fraunhofer-INT, Euskirchen, Germany

fYear

1995

fDate

18-22 Sep 1995

Firstpage

560

Lastpage

563

Abstract

Active optoelectronic devices such as light emitting diodes (LEDs), laser diodes (LDs), and photodiodes (PDs) were evaluated for degradation under gamma and 14 MeV neutron irradiation. Total dose values and neutron fluences were chosen in such a way that we get estimates of the behaviour especially in space environments and nuclear engineering. The devices are designed for wavelengths from visible (450 nm) to infrared (1300 nm). LEDs and LDs show a reduction of light output power and LDs also a shift of threshold current after irradiation. With the LEDs we also measured the light power distribution on the chip surface. Irradiations of PDs with ⁶⁰Co gammas up to a total dose of 10⁶ Gy as well as irradiations with neutrons up to fluences of 3×10¹3 cm^-2(1 MeV) lead to a strong increase of dark current

Keywords

gamma-ray effects; light emitting diodes; neutron effects; photodiodes; semiconductor lasers; 14 MeV; 1E6 Gy; 450 to 1300 nm; dark current; degradation; gamma irradiation; laser diode; light emitting diode; light output power distribution; neutron irradiation; nuclear engineering; optoelectronic device; photodiode; space environment; threshold current; Degradation; Diode lasers; Light emitting diodes; Neutrons; Optoelectronic devices; Photodiodes; Power engineering and energy; Power generation; Power measurement; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and its Effects on Components and Systems, 1995. RADECS 95., Third European Conference on

Conference_Location

Arcachon

Print_ISBN

0-7803-3093-5

Type

conf

DOI

10.1109/RADECS.1995.509837

Filename

509837