DocumentCode
2201662
Title
Evaluation of capacitors at cryogenic temperatures for space applications
Author
Patterson, Richard L. ; Hammond, A. ; Gerber, Scott S.
Author_Institution
NASA Lewis Res. Center, Cleveland, OH, USA
Volume
2
fYear
1998
fDate
7-10 Jun 1998
Firstpage
468
Abstract
Advanced electronic systems designed for use in planetary exploration missions must operate efficiently and reliably under the extreme low temperatures of deep space environment. In addition, spacecraft power electronics capable of low temperature operation will greatly simplify the thermal management system by eliminating the need for heating units and associated equipment and thereby reduce the size and weight of the overall power system. In this study, film, mica, solid tantalum and electric double layer capacitors were evaluated as a function of temperature in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for low temperature applications
Keywords
capacitors; cryogenic electronics; dielectric losses; leakage currents; power electronics; space vehicle electronics; 50 Hz to 100 kHz; DC leakage current; capacitance stability; cryogenic temperatures; deep space environment; dielectric loss; dielectric properties; electric double layer capacitors; electronic systems; extreme low temperatures; film capacitors; mica capacitors; planetary exploration missions; solid tantalum capacitors; space applications; spacecraft power electronics; thermal management system; Capacitors; Cryogenics; Dielectric losses; Power system management; Power system reliability; Power system stability; Space missions; Space vehicles; Temperature; Thermal management of electronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation, 1998. Conference Record of the 1998 IEEE International Symposium on
Conference_Location
Arlington, VA
ISSN
1089-084X
Print_ISBN
0-7803-4927-X
Type
conf
DOI
10.1109/ELINSL.1998.694835
Filename
694835
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