Title :
A 2.7-V monolithic SiGe HBT variable gain amplifier for CDMA applications
Author :
Kim, Chang-Woo ; Park, Sung-Ryong ; Kim, Young-Gi
Author_Institution :
Coll. of Electron. & Inf. Eng., Kyung Hee Univ., Seoul, South Korea
Abstract :
A monolithic SiGe HBT variable gain amplifier with high dB-linear gain control and high linearity has been developed for CDMA applications. The VGA achieves a dynamic gain control range of 30 dB with 2.7-Vdc control-voltage range in 824-849 MHz. The maximum gain and attenuation at a center frequency of 835 MHz are 23 dB and 7 dB, respectively. Input/output VSWR keep low and constant despite change in the gain-control voltage. At a low operation voltage of 2.7 V the VGA produces a output power of 5 dBm with 20 dB power gain and -57 dBc ACPR at ±885 KHz offset bands.
Keywords :
Ge-Si alloys; UHF amplifiers; bipolar analogue integrated circuits; cellular radio; code division multiple access; gain control; 2.7 V; 20 dB; 23 dB; 7 dB; 824 to 849 MHz; CDMA applications; SiGe HBT; dynamic gain control; input/output VSWR; linear gain control; monolithic variable gain amplifier; Attenuation; Dynamic range; Frequency; Gain control; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Multiaccess communication; Silicon germanium; Voltage;
Conference_Titel :
Radio and Wireless Conference, 2002. RAWCON 2002. IEEE
Print_ISBN :
0-7803-7458-4
DOI :
10.1109/RAWCON.2002.1030148
