• DocumentCode
    2201928
  • Title

    Diagnostics and analyses of a laser produced organic vapor plasma

  • Author

    Ding, Guoru ; Scharer, John E. ; Cao, Ruiwu ; Kelly, K.L.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
  • fYear
    2000
  • fDate
    4-7 June 2000
  • Firstpage
    112
  • Abstract
    Summary form only given. A fast Langmuir probe technique is developed for diagnosing a plasma produced by a 193 nm laser ionizing an organic vapor, tetrakis(dimethyl-amino)ethylene (TMAE). The plasma is characterized as high electron density (10/sup 13/-10/sup 12/ cm/sup -3/), low electron temperature (/spl sim/0.1 eV). A probe theory on correction of sheath motion effects on ion saturation currents in Langmuir probe measurements is developed, and validity conditions are also presented. Correction factors for sheath motion effect are calculated for wide ranges of electron-ion recombination coefficients, electron densities, electron temperature changes, plasma potentials and bias voltages. The calculation results can be directly applied for the correction of the sheath motion on Langmuir probe measurements. Langmuir probe electron saturation current method provides a direct electron density measurement, which is independent of ion species. The ratio of electron and ion saturation current from Langmuir probe and optical emission experiment can confirm that the major species in the experiments has not been changed. The optical emission is also carried out for diagnosing can enhance the delayed emission spectra from TMAE plasma. The plasma decay mechanisms are studied, and a delayed ionization process is found to be important. A model is developed to calculate the lifetime of the delayed ionization which is dependent of TMAE pressure and electron density.
  • Keywords
    Langmuir probes; organic compounds; photoionisation; plasma density; plasma diagnostics; plasma sheaths; plasma temperature; plasma transport processes; 193 nm; Langmuir probe measurement; Langmuir probe technique; TMAE plasma; bias voltages; delayed emission spectra; delayed ionization lifetime; delayed ionization process; electron density; electron density measurement; electron saturation current; electron temperature changes; electron-ion recombination coefficients; ion saturation current; ion species; laser ionization; laser produced organic vapor plasma; optical emission experiment; organic vapor; photoionisation; plasma diagnosis; plasma potentials; plasma pressure; probe theory; sheath motion effects; tetrakis(dimethyl-amino)ethylene; validity conditions; Delay; Electron optics; Motion measurement; Particle beam optics; Plasma density; Plasma diagnostics; Plasma measurements; Plasma sheaths; Plasma temperature; Probes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
  • Conference_Location
    New Orleans, LA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-5982-8
  • Type

    conf

  • DOI
    10.1109/PLASMA.2000.854718
  • Filename
    854718