DocumentCode :
2202642
Title :
Wafer-Level Encapsulation and Sealing of Electrostatic HARPSS Transducers
Author :
Pourkamali, Siavash ; Ayazi, Farrokh
Author_Institution :
Univ. of Denver, Denver
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
49
Lastpage :
52
Abstract :
This paper reports on a thin-film wafer-level encapsulation technique for packaging and CMOS integration of MEMS sensors and actuators fabricated through the HARPSS process. This approach takes advantage of the stationary parts of the micromechanical device itself for encapsulation of its sensitive moving parts, and therefore can be performed without addition of extensive processing steps. Encapsulated high frequency capacitive silicon resonators are demonstrated using this technique. Reliability and performance tests conducted on the encapsulated resonators reveal a high level of hermeticity and reliability with minimal interference with device operation. This technique can be applied to a wide variety MEMS sensors and actuators. Silicon transducers encapsulated using this approach can run through the regular IC fabrication and/or packaging processes.
Keywords :
electrostatic devices; encapsulation; microsensors; wafer level packaging; MEMS sensors; electrostatic HARPSS transducers; encapsulated resonators; high frequency capacitive silicon resonators; wafer-level encapsulation; Actuators; CMOS process; Electrostatics; Encapsulation; Micromechanical devices; Packaging; Silicon; Thin film sensors; Transducers; Wafer scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1930-0395
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.4388333
Filename :
4388333
Link To Document :
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