Title :
Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures
Author :
Chen, Gang ; Rapaport, Ronen ; Gmachl, Claire ; Ng, Hock M.
Author_Institution :
Lucent Technol., Bell Labs., Murray Hill, NJ, USA
Abstract :
In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.
Keywords :
III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium compounds; light absorption; nonlinear optics; semiconductor heterojunctions; semiconductor quantum wells; GaN-AlGaN; GaN-AlGaN quantum well structures; electron-electron scattering; electron-interface roughness scattering; electron-phonon scattering; excited carriers; intersubband transitions; relaxation dynamics; transition energy; ultrafast opto electronics application; Absorption; Aluminum gallium nitride; Gallium nitride; Nonlinear optics; Optical pumping; Optical saturation; Optical scattering; Optical superlattices; Probes; Ultrafast optics;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239882
