Transition from induced absorption to saturation of intersubband transitions in GaN/AlGaN quantum well structures

Author

Chen, Gang ; Rapaport, Ronen ; Gmachl, Claire ; Ng, Hock M.

Author_Institution

Lucent Technol., Bell Labs., Murray Hill, NJ, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

14

Lastpage

15

Abstract

In this paper, we show that different GaN heterostructures exhibit distinct nonlinear optical response. The response is studied using spectrally integrated pump-probe technique. The intersubband (ISBT) relaxation dynamics of excited carriers in GaN quantum well(QW) structures and their nonlinearities is essential for possible ultrafast optoelectronic applications based on these transitions.

Keywords

III-V semiconductors; aluminium compounds; electron-phonon interactions; gallium compounds; light absorption; nonlinear optics; semiconductor heterojunctions; semiconductor quantum wells; GaN-AlGaN; GaN-AlGaN quantum well structures; electron-electron scattering; electron-interface roughness scattering; electron-phonon scattering; excited carriers; intersubband transitions; relaxation dynamics; transition energy; ultrafast opto electronics application; Absorption; Aluminum gallium nitride; Gallium nitride; Nonlinear optics; Optical pumping; Optical saturation; Optical scattering; Optical superlattices; Probes; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239882

Filename

1239882