DocumentCode
2203051
Title
Ferromagnetic heterostructures for semiconductor spintronics
Author
Tanaka, Masaaki
Author_Institution
Dept. of Electron. Eng., Tokyo Univ., Japan
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
18
Abstract
The author studies developments in epitaxial ferromagnetic heterostructures based on semiconductors towards spintronics and also presents a magnetotransport study on ferromagnetic III-V semiconductor heterostructures with high Curie temperature Tc.
Keywords
Curie temperature; III-V semiconductors; aluminium compounds; beryllium; ferromagnetic materials; gallium arsenide; galvanomagnetic effects; magnetic epitaxial layers; magnetic semiconductors; magnetoelectronics; manganese; semiconductor epitaxial layers; semiconductor heterojunctions; Curie temperature; GaAs:Mn-AlGaAs:Be; III-V semiconductors heterostructure; epitaxial ferromagnetic heterostructures; ferromagnetic heterostructures; magnetotransport; semiconductor spintronics; Iron alloys; Magnetic materials; Magnetic semiconductors; Magnetic tunneling; Magnetoelectronics; Physics; Semiconductor materials; Solid state circuits; Temperature; Tunneling magnetoresistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239884
Filename
1239884
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