Title :
Electron spin splitting in polarization-doped III-nitrides
Author_Institution :
WaveBand Corp., Irvine, CA, USA
Abstract :
Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures for the first time. Despite wide bandgap, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to be comparable to that in InGaAs/GaAs matrial system due to the strong polarization field at the interface and polarization-induced doping.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; semiconductor heterojunctions; spin-orbit interactions; wide band gap semiconductors; GaN-AlGaN; InGaAs/GaAs semiconductors; electron spin split energy; electron spin splitting; polarization doped III nitrides; wide bandgap materials; wurtzite GaN/AlGaN heterostructures; Electrons; Gallium nitride; Magnetic materials; Magnetoelectronics; Photonic band gap; Polarization; Quantum computing; Semiconductor materials; Spin polarized transport; Voltage;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239885
