DocumentCode
2203083
Title
Nonmagnetic resonant tunneling spin devices
Author
Ting, D. Z Y ; Cartoixá, X. ; Chang, Y.-C.
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
21
Lastpage
22
Abstract
We report device concepts for creating spin polarized current sources without external magnetic fields, using nonmagnetic semiconductor resonant tunneling structures. These devices contain asymmetric quantum wells where quantized states are spin-split by the Rashba effect, and achieve spin filtering by exploiting the phenomenon that the spin of a resonantly transmitted electron aligns with that of the quasibound state traversed. Achieving significant spin filtering using this approach is difficult because of the intrinsic properties of the spin-split quantum well states: the k||-dependent spin splitting is typically small and vanishes at the zone center; states with opposite k|| within a given spin-split subband have opposite spins so that there is no net spin when averaged over the subband. We have developed effective strategies for overcoming these challenges, and proposed a number of new concepts for designing heterostructure based spin devices.
Keywords
III-V semiconductors; aluminium compounds; bound states; gallium compounds; indium compounds; resonant tunnelling diodes; resonant tunnelling transistors; semiconductor quantum wells; InAs-AlSb-GaSb; Rashba effect; asymmetric quantum wells; external magnetic fields; modeling; nonmagnetic resonant tunneling spin devices; nonmagnetic semiconductor resonant tunneling heterostructures; quasibound state; spin polarized current sources; spin splitting; Electron emission; Filtering; Filters; Laboratories; Light emitting diodes; Physics; Polarization; Propulsion; Resonance; Resonant tunneling devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239886
Filename
1239886
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