Title :
Nonmagnetic resonant tunneling spin devices
Author :
Ting, D. Z Y ; Cartoixá, X. ; Chang, Y.-C.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
We report device concepts for creating spin polarized current sources without external magnetic fields, using nonmagnetic semiconductor resonant tunneling structures. These devices contain asymmetric quantum wells where quantized states are spin-split by the Rashba effect, and achieve spin filtering by exploiting the phenomenon that the spin of a resonantly transmitted electron aligns with that of the quasibound state traversed. Achieving significant spin filtering using this approach is difficult because of the intrinsic properties of the spin-split quantum well states: the k||-dependent spin splitting is typically small and vanishes at the zone center; states with opposite k|| within a given spin-split subband have opposite spins so that there is no net spin when averaged over the subband. We have developed effective strategies for overcoming these challenges, and proposed a number of new concepts for designing heterostructure based spin devices.
Keywords :
III-V semiconductors; aluminium compounds; bound states; gallium compounds; indium compounds; resonant tunnelling diodes; resonant tunnelling transistors; semiconductor quantum wells; InAs-AlSb-GaSb; Rashba effect; asymmetric quantum wells; external magnetic fields; modeling; nonmagnetic resonant tunneling spin devices; nonmagnetic semiconductor resonant tunneling heterostructures; quasibound state; spin polarized current sources; spin splitting; Electron emission; Filtering; Filters; Laboratories; Light emitting diodes; Physics; Polarization; Propulsion; Resonance; Resonant tunneling devices;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239886