DocumentCode :
2203151
Title :
GaN nano epitaxial lateral overgrowth on holographically patterned
Author :
Kim, Dong-Ho ; Kim, Jaehoon ; Cho, Chio ; Jeon, Heonsu
Author_Institution :
Sch. of Phys., Seoul Nat. Univ., South Korea
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
27
Lastpage :
28
Abstract :
We have studied nano-scale GaN epitaxial lateral overgrowth on a SiO2 mask layer containing two-dimensional nano-holes. Under a proper growth condition, we successfully grew a planar GaN film on such a nano-patterned substrate without generating voids.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; holography; nanotechnology; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; wide band gap semiconductors; GaN; SiO2; SiO2 mask layer; holography; nanoscale GaN epitaxial lateral overgrowth; planar GaN film; two-dimensional nanoholes; Chemical lasers; Chemical vapor deposition; Crystalline materials; Gallium nitride; Holography; MOCVD; Organic chemicals; Physics; Semiconductor films; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
Type :
conf
DOI :
10.1109/ISCS.2003.1239889
Filename :
1239889
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2203151
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