De-embedding Techniques on a 0.25 μm Digital CMOS Process

Fully intregrated radio frequency circuits require the use of several passive devices. In designing these circuits, there is a need to know how these circuit elements behave. Inductors implemented on silicon are not easily characterized compared to their discrete counterparts. On-wafer measurement is necessary to understand the characteristics of these inductors that are implemented on silicon. This will give a better insight in the design of RF circuit that will utilize these components. In this study, several inductor structures were fabricated on a 0.25 μm CMOS process which will serve as the device under test (DUT). Open, Short1, Short2 and Thru structures were also implemented to characterize the different OPEN and THREE step de-embedding techniques