Title :
Growth of GaN on a nanoscale-faceted Si substrate by metal-organic vapor-phase epitaxy
Author :
Lee, S.C. ; Sun, X. ; Hersee, S. ; Brueck, S.R.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA
Abstract :
We demonstrate a surface morphology for growth of GaN on a Si(100) substrate by metal-organic vapor-phase epitaxy (MOVPE). The basic idea is to fabricate nanoscale periodic (111) facets on Si(100) and to restrict the initial nucleation to these (111) for better crystallinity.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; nucleation; semiconductor epitaxial layers; semiconductor growth; surface diffusion; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; GaN; GaN growth; MOVPE; Si; Si(100) substrate; crystallinity; metal organic vapor phase epitaxy; nanoscale Ga surface diffusion lengths; nanoscale-faceted Si substrate; nucleation; surface morphology; Crystallization; Epitaxial growth; Epitaxial layers; Gallium nitride; Interferometric lithography; Lattices; Scanning electron microscopy; Substrates; Sun; Surface morphology;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239894
