DocumentCode :
2203361
Title :
Comparative Study of Irradiated And Annealed ZnO Thin Films For Room Temperature Ammonia Gas Sensing
Author :
Kshirsagar, Abhijeet ; Joshi, A.B. ; Joshi, Aditee ; Avasthi, D.K. ; Bhave, T.M. ; Gangal, S.A.
Author_Institution :
Univ. of Pune, Pune
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
162
Lastpage :
165
Abstract :
Ceramic based thin film sensors are well known for gas sensing applications. These sensors are operated at elevated temperature for good sensitivity. ZnO thin film sensors operated at high temperature are used in ammonia sensing application. But to the best of author´s knowledge no room temperature ZnO (Zinc Oxide) thin film sensors are reported. The deposited ZnO films are found to be highly unstable with respect to resistance of the films at room temperature. To increase the stability two different techniques viz annealing and irradiation are tried. Comparative study of annealed and irradiated ZnO films for stability in resistance is done. Further the performance of these films as ammonia (NH3) gas sensor at room temperature has been studied. The results obtained are reported in this paper and analyzed.
Keywords :
II-VI semiconductors; ammonia; annealing; chemical variables measurement; gas sensors; semiconductor thin films; wide band gap semiconductors; ZnO; ammonia gas sensing; ammonia gas sensor; annealing; ceramic based thin film; irradiation; resistance stability; zinc oxide thin films; Annealing; Argon; Gas detectors; Glass; Sputtering; Stability; Temperature sensors; Thin film sensors; Transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2007 IEEE
Conference_Location :
Atlanta, GA
ISSN :
1930-0395
Print_ISBN :
978-1-4244-1261-7
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2007.4388361
Filename :
4388361
Link To Document :
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