Title :
Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors
Author :
Kumakura, Kazuhide ; Makimoto, Toshiki ; Kobayashi, Naoki ; Hashizume, Tamotsu ; Fukui, Takashi ; Hasegawa, Hideki
Author_Institution :
NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
Abstract :
In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.
Keywords :
EBIC; III-V semiconductors; carrier lifetime; dislocation density; gallium compounds; heterojunction bipolar transistors; magnesium; semiconductor doping; silicon; wide band gap semiconductors; EBIC; GaN:Mg; GaN:Si; Mg doped GaN; Si doped GaN; dislocation density; doping concentration; electron beam induced current; heterojunction bipolar transistors; minority carrier diffusion length; n-GaN compound; p-GaN compound; Current measurement; Diodes; Doping; Electron beams; Gallium nitride; Heterojunction bipolar transistors; P-n junctions; Plasma temperature; Scanning electron microscopy; Substrates;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239900
