Systematic investigation of minority carrier diffusion length in n-and p-GaN for nitride heterojunction bipolar transistors

Author

Kumakura, Kazuhide ; Makimoto, Toshiki ; Kobayashi, Naoki ; Hashizume, Tamotsu ; Fukui, Takashi ; Hasegawa, Hideki

Author_Institution

NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

49

Lastpage

50

Abstract

In this paper, we have investigated the doping concentration and dislocation density dependence of minority carrier diffusion length parallel to c-axis in Si-doped and Mg-doped GaN by electron beam induced current (EBIC) measurements to optimize the base structure of nitride heterojunction bipolar transistors.

Keywords

EBIC; III-V semiconductors; carrier lifetime; dislocation density; gallium compounds; heterojunction bipolar transistors; magnesium; semiconductor doping; silicon; wide band gap semiconductors; EBIC; GaN:Mg; GaN:Si; Mg doped GaN; Si doped GaN; dislocation density; doping concentration; electron beam induced current; heterojunction bipolar transistors; minority carrier diffusion length; n-GaN compound; p-GaN compound; Current measurement; Diodes; Doping; Electron beams; Gallium nitride; Heterojunction bipolar transistors; P-n junctions; Plasma temperature; Scanning electron microscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239900

Filename

1239900