Title :
Characterization of CMOS IC photodiodes using focused laser sources
Author :
Clarke, Delroy E. ; Perry, Reginald ; Arora, Krishna
Author_Institution :
Florida A&M Univ., Tallahassee, FL, USA
Abstract :
The static photoresponse of CMOS based integrated circuit (IC) photodiodes is presented. Typically, a standard CMOS n-well process can support n+-Psub, nwell-Psub, and p+-nwell photodiode types. Each type of photodiode is characterized using one of four focused optical sources including: 1 HeNe green (λ=543 nm), 2 HeNe red (λ=633 nm), laser diode red (λ=670 mm), and 4 laser diode infrared (λ=818 nm) lasers. In general, the responsivity of the photodiodes is comparable to commercially available devices, so they are ideally suited for low-cost low-power CMOS based optoelectronic circuits
Keywords :
CMOS integrated circuits; infrared detectors; integrated circuit testing; integrated optoelectronics; measurement by laser beam; photodetectors; photodiodes; 543 nm; 633 nm; 670 nm; 818 nm; CMOS IC photodiodes; HeNe; HeNe green laser diode; HeNe red laser diode; focused laser sources; focused optical sources; laser diode infrared lasers; low cost CMOS optoelectronic circuits; low power CMOS optoelectronic circuits; responsivity; standard CMOS n-well process; static photoresponse; Anodes; CMOS image sensors; CMOS integrated circuits; CMOS process; Cathodes; Doping; Educational institutions; Focusing; Optical sensors; Photodiodes;
Conference_Titel :
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location :
Tampa, FL
Print_ISBN :
0-7803-3088-9
DOI :
10.1109/SECON.1996.510094