DocumentCode
2203516
Title
The condition numbers arising in MESFET parameter extraction
Author
King, Firman Dean ; Winson, Peter ; Snider, Arthur David ; Dunleavy, Larry ; Levinson, Deborah P.
Author_Institution
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
fYear
1996
fDate
11-14 Apr 1996
Firstpage
385
Lastpage
387
Abstract
Conditions numbers expressing the sensitivity of computed circuit element values to inaccuracies in S-parameter measurements are derived and evaluated for a standard small-signal MESFET model. The condition numbers shed light on the common difficulty experienced by transistor modelers in extracting accurate values for the input resistance. Other elements are also classified according to their sensitivity
Keywords
S-parameters; electric resistance; parameter estimation; power MESFET; semiconductor device models; sensitivity analysis; MESFET parameter extraction; S-parameter; circuit element values; condition numbers; input resistance; sensitivity; standard small-signal MESFET model; transistor modelers; Circuits; Delay effects; Electric variables measurement; Electrical resistance measurement; MESFETs; Measurement standards; Nonlinear equations; Parameter extraction; Scattering parameters; Upper bound;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location
Tampa, FL
Print_ISBN
0-7803-3088-9
Type
conf
DOI
10.1109/SECON.1996.510095
Filename
510095
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