Epitaxial growth of InN on GaN by metalorganic chemical vapor deposition

Author

Seo, HutChan ; Kim, Hyun Jin ; Na, Hyunseok ; Kwon, SoowYong ; Kim, Hee Jin ; Shin, Yoori ; Lee, Keon-Hun ; Cheong, Hyeonsik M. ; Yoon, Euijoon

Author_Institution

Dept. of Mater. Sci. & Eng., Seoul Nat. Univ., South Korea

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

59

Lastpage

60

Abstract

We grew InN epilayers on GaN by metalorganic chemical vapor deposition (MOCVD) and characterized the optical and structural properties of InN. Crystal structure and surface morphology were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD). Optical properties were measured by photoluminescence (PL).

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; crystal structure; indium compounds; photoluminescence; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; surface morphology; vapour phase epitaxial growth; wide band gap semiconductors; GaN; InN; MOCVD; PL; SEM; X-ray diffraction; XRD; crystal structure; epitaxial growth; metalorganic chemical vapor deposition; optical properties; photoluminescence; scanning electron microscopy; structural properties; surface morphology; Chemical vapor deposition; Electron optics; Epitaxial growth; Gallium nitride; MOCVD; Optical diffraction; Scanning electron microscopy; Surface morphology; X-ray diffraction; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239905

Filename

1239905