DocumentCode
2203710
Title
Device performance characterization and modeling of recombination current in CdTe/CdS pn junction diodes
Author
Oman, Daniel M. ; Ferekides, Chris S. ; Morel, Don L.
Author_Institution
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
fYear
1996
fDate
11-14 Apr 1996
Firstpage
421
Lastpage
424
Abstract
A comprehensive model of pn junction diode behaviour based on Shockley-Read-Hall (SRH) recombination theory is presented and been successfully applied to a large number CdTe photovoltaic cells in the 10%-15% efficiency range. The model accounts for the range of measured values of diode quality factor and reverse saturation current found in our devices as well as an observed relationship between these parameters
Keywords
II-VI semiconductors; cadmium compounds; electron-hole recombination; semiconductor device models; semiconductor diodes; solar cells; 10 to 15 percent; CdTe photovoltaic cells; CdTe-CdS; CdTe/CdS pn junction diodes; Shockley-Read-Hall recombination theory; device performance characterization; diode quality factor; recombination current modeling; reverse saturation current; Contacts; Current density; Dark current; Equations; Equivalent circuits; Lighting; Photovoltaic cells; Q factor; Schottky diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Southeastcon '96. Bringing Together Education, Science and Technology., Proceedings of the IEEE
Conference_Location
Tampa, FL
Print_ISBN
0-7803-3088-9
Type
conf
DOI
10.1109/SECON.1996.510103
Filename
510103
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