Title :
Photoluminescence and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells
Author :
Kawaguchi, M. ; Miyamoto, T. ; Kawakami, S. ; Saito, A. ; Koyama, F.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We investigated photoluminescence (PL) and lasing characteristics of 1.3 μm GaInNAs/GaAsP/GaAs strain-compensated quantum wells by MOCVD. We observed the increase of PL intensity and reduction of the threshold by applying appropriate GaAsP barriers.
Keywords :
III-V semiconductors; MOCVD coatings; gallium arsenide; gallium compounds; indium compounds; photoluminescence; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; 1.3 micron; GaAsP barriers; GaInNAs-GaAsP-GaAs; GaInNAs/GaAsP/GaAs strain compensated quantum wells; MOCVD; PL; lasing properties; photoluminescence; threshold reduction; Gallium arsenide; MOCVD; Optical materials; Photoluminescence; Pulse measurements; Quantum well lasers; Space vector pulse width modulation; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239912
