Title :
Electron effective mass of Ga0.7In0.3NxAs1-x
Author :
Kondow, M. ; Fujisaki, S. ; Shirakata, S. ; Ikari, T. ; Kitatani, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
The electron effective mass of GaInNAs is important to design excellent long-wavelength lasers on GaAs. However, it remains still unestablished. We find that it is 0.08±0.1 m0 almost independent of nitrogen content from 0.3 to 1.5%.
Keywords :
III-V semiconductors; effective mass; gallium arsenide; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; Ga0.7In0.3NxAs1-x; GaInNAs electron effective mass; long wavelength lasers; nitrogen content; Design engineering; Effective mass; Electrons; Energy measurement; Gallium arsenide; Nitrogen; Optical materials; Optical scattering; Particle scattering; Temperature measurement;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239914
