DocumentCode
2203986
Title
Temperature-dependent orientation of intraband dipoles of self-assembled InAs/GaAs quantum dot ensembles
Author
Chen, Zhonghui ; Kim, Eui-Tae ; Madhukar, Anupam
Author_Institution
Dept. of Mater. Sci. & Phys., Univ. of Southern California, Los Angeles, CA, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
95
Lastpage
96
Abstract
The temperature dependence of the orientation of intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots (QDs) embedded in n-i(QDs)-n configuration was reported.
Keywords
Fourier transform spectra; III-V semiconductors; electric moments; gallium arsenide; indium compounds; infrared spectra; photoelectron spectra; photovoltaic effects; self-assembly; semiconductor quantum dots; 10 to 77 K; InAs-GaAs; intraband transition induced dipoles; self-assembled InAs/GaAs quantum dot ensembles; temperature dependent orientation; Energy states; Gallium arsenide; Land surface temperature; Photoconductivity; Quantum dot lasers; Quantum dots; Stationary state; Temperature dependence; US Department of Transportation; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239922
Filename
1239922
Link To Document