Title :
Selective growth of InAs quantum dots on patterned GaAs substrate by metal-organic chemical vapor deposition
Author :
Hsieh, Tung-Po ; Pe-Chin Chiu ; Liu, Yu-Chum ; Yeh, Nien-Tze ; Ho, Wen-Jeng ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
Abstract :
In this paper, we demonstrate quantum dots (QDs) on nano-scale mesa using wet chemical etching and epitaxial growth process on Si-doped GaAs substrates.
Keywords :
III-V semiconductors; MOCVD; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum dots; sputter etching; GaAs:Si; InAs; InAs quantum dots epitaxial growth; Si doped GaAs substrate; metal organic chemical vapor deposition; wet chemical etching; Buffer layers; Chemical vapor deposition; Epitaxial growth; Gallium arsenide; Laboratories; Optical buffering; Photoluminescence; Quantum dots; Substrates; US Department of Transportation;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239923
