Title :
Ion implantation for creating room temperature ferromagnetism in wide bandgap semiconductors
Author :
Pearton, S.J. ; Abernathy, C.R. ; Ren, F. ; Norton, D.P. ; Hebard, A.F. ; Zavada, J.M. ; Wilson, R.G.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
Abstract :
We summarize recent progress in creating dilute magnetic semiconductors such as (Ga,Mn)N, (Ga,Mn)P, (Zn,Mn)O, (Si,Mn)C, and (Zn,Mn)SiGeN2 exhibiting room temperature ferromagnetism through the use of ion implantation, the origins of the magnetism and its potential applications in novel device such as spin-polarized light emitters and spin field effect transistors.
Keywords :
Ge-Si alloys; II-VI semiconductors; III-V semiconductors; aluminium compounds; cadmium compounds; chromium compounds; elemental semiconductors; ferromagnetic materials; gallium arsenide; gallium compounds; germanium; germanium compounds; indium compounds; ion implantation; manganese compounds; semimagnetic semiconductors; silicon; wide band gap semiconductors; zinc compounds; 293 to 298 K; AlAs; CdMnGeP2; GaAs; GaCrN; GaMnN; GaMnP; GaSb; Si; ZnO; dilute magnetic semiconductors; ion implantation; room temperature ferromagnetism; spin field effect transistors; spin polarized light emitters; wide bandgap semiconductors; Ion implantation; Magnetic devices; Magnetic materials; Magnetic properties; Magnetic semiconductors; Optoelectronic and photonic sensors; Photonic band gap; Semiconductor materials; Temperature; Wide band gap semiconductors;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239930
