• DocumentCode
    2204260
  • Title

    P-doping of zinc oxide using phosphorous oxide and thermal annealing

  • Author

    Park, Seong-Ju

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., Gwangju, South Korea
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    116
  • Lastpage
    117
  • Abstract
    We have discussed p-doping of zinc oxide using phosphorus oxide and thermal annealing. P-ZnO thin films were successfully prepared by sputtering a ZnO target doped with P2O5 at high temperatures followed by a thermal annealing. ZnO thin films were grown on sapphire c-plane by radio-frequency sputtering. Carrier concentration of RTA treated ZnO thin films has been investigated.
  • Keywords
    II-VI semiconductors; carrier density; phosphorus; rapid thermal annealing; semiconductor doping; semiconductor thin films; sputtered coatings; zinc compounds; Al2O3; P-doping; RTA; ZnO thin films; ZnO:P; carrier concentration; phosphorous oxide; radiofrequency sputtering; sapphire; thermal annealing; Excitons; Materials science and technology; Optical films; Rapid thermal annealing; Rapid thermal processing; Semiconductor thin films; Sputtering; Temperature; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239933
  • Filename
    1239933
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2204260