DocumentCode
2204304
Title
Effects of low-temperature buffer layer on the quality of RF magnetron sputtering grown ZnO/Si films
Author
Kim, Ii-Soo ; Jeong, Sang Hun ; Kim, Sang Sub ; Lee, Byung Teak
Author_Institution
Dept. of Mater. Sci. & Eng., Chonnam Nat. Univ., Kwangju, South Korea
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
119
Lastpage
120
Abstract
Results of detailed characterization indicate that the PL emission and the microstructure of ZnO/Si films grown by RF magnetron sputtering are significantly improved by increasing growth temperature and inserting low temperature buffer layer.
Keywords
II-VI semiconductors; crystal microstructure; photoluminescence; semiconductor growth; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; PL emission; RF magnetron sputtering; Si; ZnO; ZnO/Si films growth; growth temperature; low-temperature buffer layer; microstructure; photoluminescence; Buffer layers; Crystallization; Excitons; Microstructure; Radio frequency; Scanning electron microscopy; Semiconductor films; Sputtering; Temperature; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors, 2003. International Symposium on
Print_ISBN
0-7803-7820-2
Type
conf
DOI
10.1109/ISCS.2003.1239935
Filename
1239935
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