Title :
Growth characteristics of ZnO nanowires on silicon, sapphire and GaN substrates
Author :
Hong, Hyun-Gi ; Seong, Tae-Yeon ; Lee, Seonghoon
Author_Institution :
Dept. of Mater. Sci. & Eng., Kwangju Inst.of Sci. & Technol., Gwangju, South Korea
Abstract :
ZnO nanowires have been grown on [001] silicon, c-sapphire and micro-patterned (0001) GaN substrates, which are characterized by scanning electron microscopy, X-ray diffraction, and photoluminescence. It is shown that the crystallinity of the nanowires sensitively depends on the types of the substrates. The ZnO nanowires have good optical and structural properties.
Keywords :
II-VI semiconductors; X-ray diffraction; nanotechnology; nanowires; photoluminescence; pulsed laser deposition; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; wide band gap semiconductors; zinc compounds; (001) silicon substrates; Al2O3; GaN; PLD; Si; X-ray diffraction; ZnO; ZnO nanowires; crystallinity; micropatterned (0001) GaN substrates; optical properties; photoluminescence; pulsed laser deposition; sapphire substrates; scanning electron microscopy; structural properties; Crystallization; Electron optics; Gallium nitride; Nanowires; Optical diffraction; Photoluminescence; Scanning electron microscopy; Silicon; X-ray diffraction; Zinc oxide;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239936
