Title :
Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode
Author :
Chang, Wen-Hao ; An-Tai Chou ; Chen, Wen-Yen ; Chang, Hsiang-Szu ; Hsu, Tzu-Min ; Pei, Zingway ; Chen, Pan-Shiu ; Lee, S.W. ; Lai, Li-Shyue ; Lu, S.C. ; Tsai, M.-J.
Author_Institution :
Dept. of Phys., Nat. Central Univ., Chung-li, Taiwan
Abstract :
We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.
Keywords :
electroluminescence; elemental semiconductors; germanium; light emitting diodes; passivation; semiconductor diodes; semiconductor quantum dots; silicon; 1.3 to 1.5 micron; 293 to 298 K; 80 to 300 K; EL intensities; Ge-Si; Ge/Si quantum-dot; internal quantum efficiency; light-emitting diode; mesa-type structure; room temperature electroluminescence; silicon oxide layer; surface-side wall passivation; Current density; Displays; Electroluminescence; Industrial electronics; Light emitting diodes; Oxidation; Passivation; Physics; Quantum dots; Radiative recombination;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239940
