Room-temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si quantum-dot light-emitting diode

Author

Chang, Wen-Hao ; An-Tai Chou ; Chen, Wen-Yen ; Chang, Hsiang-Szu ; Hsu, Tzu-Min ; Pei, Zingway ; Chen, Pan-Shiu ; Lee, S.W. ; Lai, Li-Shyue ; Lu, S.C. ; Tsai, M.-J.

Author_Institution

Dept. of Phys., Nat. Central Univ., Chung-li, Taiwan

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

129

Lastpage

130

Abstract

We report RT EL from Ge/Si QD light-emitting diodes (LED). The LEDs were fabricated in mesa-type structure, with silicon oxide layer on the top for surface/side wall passivation. Different passivation processes have been employed. We found that the EL intensities are relatively less sensitive to temperature in the range of 80 to 300 K. At RT, an internal quantum efficiency up to 0.015 % has been achieved.

Keywords

electroluminescence; elemental semiconductors; germanium; light emitting diodes; passivation; semiconductor diodes; semiconductor quantum dots; silicon; 1.3 to 1.5 micron; 293 to 298 K; 80 to 300 K; EL intensities; Ge-Si; Ge/Si quantum-dot; internal quantum efficiency; light-emitting diode; mesa-type structure; room temperature electroluminescence; silicon oxide layer; surface-side wall passivation; Current density; Displays; Electroluminescence; Industrial electronics; Light emitting diodes; Oxidation; Passivation; Physics; Quantum dots; Radiative recombination;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239940

Filename

1239940