DocumentCode :
2204472
Title :
A numerical analysis on CdS:O window layer for higher efficiency CdTe solar cells
Author :
Islam, Aminul ; Matin, M.A. ; Aliyu, Mohammed Mannir ; Sulaiman, Yusuf ; Amin, Nowshad
Author_Institution :
Dept. of Electr., Electron. & Syst. Eng., Univ. Kebangsaan Malaysia, Bangi, Malaysia
fYear :
2009
fDate :
17-19 Dec. 2009
Firstpage :
1
Lastpage :
4
Abstract :
Polycrystalline thin film CdTe solar cell continues to be a leading candidate in the PV research and market because of its cost effectiveness and efficiency. In the conventional CdTe cell, polycrystalline cadmium sulfide (CdS) has been used as the best suited n-type heterojunction partner in the last few decades. This study demonstrates the use of novel CdS:O film as n-type heterojunction partner of CdTe cell, which has higher optical band gap (2.42-3.1eV), better lattice-match with CdTe and reduces the unwanted diffused layers than the poly-CdS layer. This novel CdS:O material is utilized in the baseline case of CdTe cell and a cell conversion efficiency as high as 18.5% (Jsc =26.56 mA/cm2, Voc = 0.95 V and FF=0.8) has been found by numerical analysis utilizing AMPS-1D software. The cell normalized efficiency and Voc are found to decrease linearly at the operating temperature gradient of -0.2%/??C, indicating higher stability of the material at higher operating temperatures.
Keywords :
cadmium compounds; numerical analysis; solar cells; AMPS-1D software; CdS:O; CdTe; cell conversion efficiency; cell normalized efficiency; electron volt energy 2.42 eV to 3.1 eV; lattice-match; n-type heterojunction; numerical analysis; optical band gap; polycrystalline cadmium sulfide; polycrystalline thin film solar cell; unwanted diffused layers; window layer; Cadmium compounds; Costs; Heterojunctions; Numerical analysis; Optical films; Optical materials; Photonic band gap; Photovoltaic cells; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Developments in Renewable Energy Technology ( ICDRET), 2009 1st International Conference on the
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6012-0
Type :
conf
DOI :
10.1109/ICDRET.2009.5454223
Filename :
5454223
Link To Document :
بازگشت