Title :
High efficiency deep UV light emitting diodes at 285 nm
Author :
Shatalov, M. ; Zhang, J. ; Adivarahan, V. ; Chitnis, A. ; Rai, S. ; Wu, S. ; Sun, J. ; Mandavilli, V. ; Khan, M. Asif
Author_Institution :
Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
In this report we present the results of a study where small junction area devices were used to increase the current density and suppress the effect of nonradiative recombination thereby achieving a record high external quantum efficiency of 0.14% for a 285 nm two AlGaN quantum well LED.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; 285 nm; AlGaN; AlGaN quantum well LED; current density; high efficiency deep UV light emitting diodes; high external quantum efficiency; nonradiative recombination; small junction area devices; Aluminum gallium nitride; Charge carrier density; Current density; Heating; Light emitting diodes; Power generation; Radiative recombination; Sun;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239944
