Milliwatt operation of sapphire based 340 nm UV LEDs with quaternary AlInGaN quantum wells at room and cryogenic temperatures

Author

Chitnis, A. ; Zhang, J. ; Adivarahan, V. ; Shatalov, M. ; Rai, S. ; Wu, S. ; Sun, J. ; Mandavilli, V. ; Khan, Muhammad Asad

Author_Institution

Dept. of Electr. Eng., South Carolina Univ., Columbia, SC, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

143

Lastpage

144

Abstract

In this report, the LED structure was grown over basal plane sapphire substrate and consisted of high quality bottom n⁺-AlGaN clad layer followed with three pairs of AlInGaN/AlGaN MQW active region. A record optical power of 0.405 mW at 50 mA of dc bias was measured for the packaged LED, which translates to an external quantum efficiency of 0.22%. The electrical and optical characteristics of the AlInGaN LED were then measured over a temperature range from 10K-300K.

Keywords

III-V semiconductors; aluminium compounds; cryogenics; electrical conductivity; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; 0.405 mW; 10 to 300 K; 340 nm; 50 mA; Al₂O₃; AlGaN clad layer; AlInGaN; UV LED structure; cryogenic temperatures; electrical properties; external quantum efficiency; milliwatt operation; optical power; optical properties; quaternary AlInGaN quantum wells; room temperatures; sapphire substrate; Aluminum gallium nitride; Cryogenics; Electric variables measurement; Light emitting diodes; Optical recording; Packaging; Power measurement; Quantum well devices; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors, 2003. International Symposium on

Print_ISBN

0-7803-7820-2

Type

conf

DOI

10.1109/ISCS.2003.1239947

Filename

1239947