• DocumentCode
    2204641
  • Title

    Suppression of ion emission and pinching using heated tantalum anodes in high-power electron-beam diodes

  • Author

    Weber, B.V. ; Stephanakis, S.J. ; Black, D.C. ; Cooperstein, G. ; Pereira, N.R.

  • Author_Institution
    Div. of Plasma Phys., Naval Res. Lab., Washington, DC, USA
  • fYear
    2000
  • fDate
    4-7 June 2000
  • Firstpage
    154
  • Abstract
    Summary form only given. Tantalum anodes used as X-ray sources in high-power electron-beam diodes can be copious sources of ions. The part of the total current carried by ions effectively reduces the X-ray production efficiency. Tantalum absorbs gas, even at elevated temperatures (maximum at 1300 K). These gases are released and ionized when a powerful e-beam vaporizes the tantalum foil, and the low-Z impurities (hydrogen, carbon, etc.) form an ion beam that can become a substantial fraction of the diode current. Gases on the surface can be removed by moderate heating prior to a shot, but gases entrained in the interior of a tantalum sheet require higher temperatures (2300 K or greater) to remove them. A pulsed resistive heating technique has been developed to heat tantalum X-ray converters in situ and the effects investigated on the Gamble II generator (1.5 MV, 0.7 MA, 60 ns) at the Naval Research Laboratory.
  • Keywords
    X-ray production; anodes; electron beam effects; ion emission; pinch effect; plasma impurities; plasma production; tantalum; 0.7 MA; 1.5 MV; 12 kA; 1300 K; 2300 K; 3.7 mF; 7 to 13 kV; C; Gamble II generator; H; Ta; Ta foil; X-ray converters; X-ray production efficiency; X-ray sources; diode current; electron-beam vaporization; gas absorption; heated Ta anodes; high-power electron-beam diodes; ion emission suppression; ion sources; low-Z impurities; moderate heating; pinching; pulsed resistive heating technique; substantial fraction; total current; Anodes; Diodes; Gases; Heating; Hydrogen; Impurities; Ion beams; Ion emission; Production; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
  • Conference_Location
    New Orleans, LA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-5982-8
  • Type

    conf

  • DOI
    10.1109/PLASMA.2000.854835
  • Filename
    854835