DocumentCode :
2204641
Title :
Suppression of ion emission and pinching using heated tantalum anodes in high-power electron-beam diodes
Author :
Weber, B.V. ; Stephanakis, S.J. ; Black, D.C. ; Cooperstein, G. ; Pereira, N.R.
Author_Institution :
Div. of Plasma Phys., Naval Res. Lab., Washington, DC, USA
fYear :
2000
fDate :
4-7 June 2000
Firstpage :
154
Abstract :
Summary form only given. Tantalum anodes used as X-ray sources in high-power electron-beam diodes can be copious sources of ions. The part of the total current carried by ions effectively reduces the X-ray production efficiency. Tantalum absorbs gas, even at elevated temperatures (maximum at 1300 K). These gases are released and ionized when a powerful e-beam vaporizes the tantalum foil, and the low-Z impurities (hydrogen, carbon, etc.) form an ion beam that can become a substantial fraction of the diode current. Gases on the surface can be removed by moderate heating prior to a shot, but gases entrained in the interior of a tantalum sheet require higher temperatures (2300 K or greater) to remove them. A pulsed resistive heating technique has been developed to heat tantalum X-ray converters in situ and the effects investigated on the Gamble II generator (1.5 MV, 0.7 MA, 60 ns) at the Naval Research Laboratory.
Keywords :
X-ray production; anodes; electron beam effects; ion emission; pinch effect; plasma impurities; plasma production; tantalum; 0.7 MA; 1.5 MV; 12 kA; 1300 K; 2300 K; 3.7 mF; 7 to 13 kV; C; Gamble II generator; H; Ta; Ta foil; X-ray converters; X-ray production efficiency; X-ray sources; diode current; electron-beam vaporization; gas absorption; heated Ta anodes; high-power electron-beam diodes; ion emission suppression; ion sources; low-Z impurities; moderate heating; pinching; pulsed resistive heating technique; substantial fraction; total current; Anodes; Diodes; Gases; Heating; Hydrogen; Impurities; Ion beams; Ion emission; Production; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
Conference_Location :
New Orleans, LA, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-5982-8
Type :
conf
DOI :
10.1109/PLASMA.2000.854835
Filename :
854835
Link To Document :
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