Title :
Optimum VLD makes SPIC better and cheaper
Author :
Xing-bi, Chen ; Xue-feng, Fan
Author_Institution :
Res. Inst. of Micro-Electronics, Univ. of Electron. Sci. & Technol., Chengdu, China
Abstract :
The novel structure for surface voltage sustaining region makes power (or high-voltage) devices capable of implementation on conventional CMOS or BiCMOS ICs without demanding additional processes. The electrical performances of this kind of power devices are much better than that made by the BCD techniques. Different kinds of devices using both the low-side and high-side can be made
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; power integrated circuits; SPIC; high-voltage devices; optimum VLD; power devices; smart power IC; surface voltage sustaining region; BiCMOS integrated circuits; CMOS process; CMOS technology; Control systems; Costs; Doping; Electrons; Implants; Power engineering and energy; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981433
