Title :
Luminescence efficiency of InGaN multiple quantum well UV-LEDs
Author :
Pan, Chang-Chi ; Lee, Chia-Ming ; Hsu, Wen-Jay ; Chen, Guan-Ting ; Chyi, Jen-Inn
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-li, Taiwan
Abstract :
In this paper, we have conduced a series of measurements to investigate the luminescence efficiency of UV-LEDs with emission wavelength of 400 nm. Injection current-dependent characteristics are analysed to clarify the dominant factors affecting the luminescence efficiency of UV-LEDs.
Keywords :
III-V semiconductors; current density; electroluminescence; gallium compounds; indium compounds; light emitting diodes; quantum well devices; wide band gap semiconductors; 400 nm; InGaN; InGaN multiple quantum well UV-LED; injection current-dependent properties; luminescence efficiency; Current density; Electroluminescence; Gallium nitride; Light emitting diodes; Luminescence; Power generation; Pulse measurements; Quantum well devices; Radiative recombination; Solid state lighting;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239950
