Title :
IGBT with dynamic controlled anode-short used in power IC
Author :
Hong-qiang, Yang ; Xing-bi, Chen
Author_Institution :
Res. Inst. of Micro-Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A new structure to resolve the contradiction between the on-resistance and turning-off time of IGBT is brought forward, which can currently be used in the low-side device of the half-bridge output section of power IC with high-side and low-side drive and halfbridge output section. The basic idea of dynamic controlled anode-short is used to get shorter turn-off time without increasing on-resistance, changing process steps or additional circuit devices. Some analyses and simulation results are given
Keywords :
driver circuits; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; semiconductor device breakdown; semiconductor device models; IGBT; TMA MEDICI; breakdown voltage; drive circuit; dynamic controlled anode-short; half-bridge output section; on-resistance; power IC; power electronics; simulation; turning-off time; Anodes; Bridge circuits; Conductivity; Impurities; Insulated gate bipolar transistors; MOSFET circuits; Medical simulation; Power integrated circuits; Turning; Voltage;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.981437
