Electrical characteristics of a new lateral trench electrode IGBT for smart power IC

Author

Kang, Ey Goo ; Moon, Seung Hyun ; Sung, Man Young

Author_Institution

Dept. of Electr. Eng., Korea Univ., Seoul, South Korea

Volume

1

fYear

2001

fDate

2001

Firstpage

127

Abstract

A new small sized Lateral Trench Electrode Insulated Gate Bipolar Transistor (LTEIGBT) was proposed to improve characteristics of the conventional Lateral IGBT (LIGBT) and Lateral Trench gate IGBT (LTIGBT). The entire Electrode of LTEIGBT was replaced with trench-type electrode. The LTEIGBT was designed so that the width of the device was no more than 19μm. Latch-up current densities of the proposed LTEIGBT increased 10 and 2.3 times more than those of the conventional LIGBT and LTIGBT. Forward blocking voltage of the LTEIGBT was 130V. Conventional LIGBT and LTIGBT of the same size were 60V and 100V, respectively. Because the proposed LTEIGBT was constructed of trench-type electrodes, the electric field moved toward the trench-oxide layer and punch-through breakdown finally occurred

Keywords

insulated gate bipolar transistors; power integrated circuits; 100 V; 130 V; 19 micron; 60 V; forward blocking voltage; latch-up current densities; lateral trench electrode IGBT; punch-through breakdown; smart power IC; Anodes; Cathodes; Current density; Electric variables; Electrodes; Insulated gate bipolar transistors; Medical simulation; Numerical simulation; Power integrated circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Conference_Location

Shanghai

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.981439

Filename

981439