Title :
Polarization dependent inter-subband transitions in n-type InGaAs/GaAs and p-type SiGe/Ge self assembled dots: theoretical studies
Author :
Lin, Yih-Yin ; Singh, Jasprit
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
Here we describe the electronic levels and polarisation dependence of intersubband transitions for n-type InGaAs/GaAs and p-type SiGe/Si self assembled quantum dots. The valence band and band structure intersubband transitions have been theoretically examined of SiGe/Si quantum dots.
Keywords :
Ge-Si alloys; III-V semiconductors; elemental semiconductors; gallium arsenide; indium compounds; infrared spectra; light polarisation; self-assembly; semiconductor quantum dots; silicon; valence bands; visible spectra; InGaAs-GaAs; SiGe-Si; band structure; electronic levels; n type InGaAs/GaAs assembled dots; p type SiGe/Ge self assembled dots; polarization dependent intersubband transitions; valence band; Absorption; Gallium arsenide; Germanium silicon alloys; Indium gallium arsenide; Optical polarization; Quantum dots; Quantum mechanics; Shape; Silicon germanium; US Department of Transportation;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239955
