Title :
AlGaN-GaN HEMTs: material, device, circuit technology and applications
Author :
Parikh, P. ; Wu, Y.-F. ; Chavarkar, P. ; Moore, M. ; Mishra, U.K. ; Sheppard, S. ; Smith, A. ; Saxler, A. ; Duc, J. ; Pribble, W. ; Milligan, J. ; Palmour, J.
Author_Institution :
Cree Santa Barbara Technol. Center, CA, USA
Abstract :
In this paper recent progress in material, device and circuit technology of GaN based HEMT is discussed. We have also developed GaN HEMT hybrid amplifiers as well as MMICs, including air wedge and MIMC capacitors and resistors.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; AlGaN-GaN HEMT; HEMT hybrid amplifiers; MIM capacitors; MMIC; circuit technology; resistors; Aluminum gallium nitride; Broadband amplifiers; Circuits; Fabrication; Gallium nitride; HEMTs; MODFETs; Silicon carbide; Temperature; Thermal management;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239957
