Title :
Effect of surface passivation on breakdown of AlGaN/GaN HEMTs
Author :
Ohno, Yutaka ; Nakao, Takeshi ; Kishimoto, Shigeru ; Maezawa, K. ; Mizutani, Takashi
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
Abstract :
We have investigated the effect of surface passivation on breakdown by electrical characterization and electroluminescence (EL) measurements of AlGaN/GaN HEMTs.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; electroluminescence; gallium compounds; high electron mobility transistors; passivation; wide band gap semiconductors; AlGaN-GaN; AlGaN/GaN HEMT; EL; electric breakdown; electrical properties; electroluminescence; surface passivation; Aluminum gallium nitride; Electric breakdown; Electric variables measurement; Electrons; Gallium nitride; HEMTs; Impact ionization; MODFETs; Passivation; Temperature dependence;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239959
