• DocumentCode
    2204902
  • Title

    Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation

  • Author

    Fujishiro, Hiroki I. ; Mikami, N. ; Take, Teruyula ; Izawa, Michiyoshi ; Moku, Tetsuji ; Ohtuka, Kohji

  • Author_Institution
    Dept. of Appl. Electron., Tokyo Univ. of Sci., Chiba, Japan
  • fYear
    2003
  • fDate
    25-27 Aug. 2003
  • Firstpage
    171
  • Lastpage
    172
  • Abstract
    In this paper, the mechanism of the self-heating in the GaN/AlGaN HEMT and its influence on the device performance theoritically by 2D Monte Carlo device simulation. Three different substrates (i.e., 6H-SiC, sapphire and Si) have been used and compared in this work.
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 2D Monte Carlo device simulation; 6H-SiC substrates; Al2O3; GaN-AlGaN; GaN/AlGaN HEMT; Si; Si substrates; SiC; sapphire substrates; self-heating effect; Aluminum gallium nitride; Electrons; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Phonons; Scattering; Thermal conductivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductors, 2003. International Symposium on
  • Print_ISBN
    0-7803-7820-2
  • Type

    conf

  • DOI
    10.1109/ISCS.2003.1239960
  • Filename
    1239960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2204902