Title :
Self-heating effect on device characteristics of GaN/AlGaN HEMTs: 2D Monte Carlo device simulation
Author :
Fujishiro, Hiroki I. ; Mikami, N. ; Take, Teruyula ; Izawa, Michiyoshi ; Moku, Tetsuji ; Ohtuka, Kohji
Author_Institution :
Dept. of Appl. Electron., Tokyo Univ. of Sci., Chiba, Japan
Abstract :
In this paper, the mechanism of the self-heating in the GaN/AlGaN HEMT and its influence on the device performance theoritically by 2D Monte Carlo device simulation. Three different substrates (i.e., 6H-SiC, sapphire and Si) have been used and compared in this work.
Keywords :
III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 2D Monte Carlo device simulation; 6H-SiC substrates; Al2O3; GaN-AlGaN; GaN/AlGaN HEMT; Si; Si substrates; SiC; sapphire substrates; self-heating effect; Aluminum gallium nitride; Electrons; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Phonons; Scattering; Thermal conductivity; Voltage;
Conference_Titel :
Compound Semiconductors, 2003. International Symposium on
Print_ISBN :
0-7803-7820-2
DOI :
10.1109/ISCS.2003.1239960
